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MCP1702

250 mA Low Quiescent Current LDO Regulator

Features:

Description:

? 2.0 μA Quiescent Current (typical)

The MCP1702 is a family of CMOS low dropout (LDO)

voltage regulators that can deliver up to 250 mA of

current while consuming only 2.0 μA of quiescent

current (typical). The input operating range is specified

from 2.7V to 13.2V, making it an ideal choice for two to

six primary cell battery-powered applications, 9V

alkaline and one or two cell Li-Ion-powered

applications.

? Input Operating Voltage Range: 2.7V to 13.2V

? 250 mA Output Current for Output Voltages ? 2.5V

? 200 mA Output Current for Output Voltages < 2.5V

? Low Dropout (LDO) Voltage

- 625 mV typical @ 250 mA (V_OUT= 2.8V)

? 0.4% Typical Output Voltage Tolerance

? Standard Output Voltage Options:

The MCP1702 is capable of delivering 250 mA with

only 625 mV (typical) of input to output voltage

differential (V_OUT= 2.8V). The output voltage tolerance

of the MCP1702 is typically ±0.4% at +25°C and ±3%

maximum over the operating junction temperature

range of -40°C to +125°C. Line regulation is ±0.1%

typical at +25°C.

- 1.2V, 1.5V, 1.8V, 2.5V, 2.8V,

3.0V, 3.3V, 4.0V, 5.0V

? Output Voltage Range 1.2V to 5.5V in 0.1V

Increments (50 mV increments available upon

request)

? Stable with 1.0 μF to 22 μF Output Capacitor

? Short-Circuit Protection

Output voltages available for the MCP1702 range from

1.2V to 5.0V. The LDO output is stable when using only

1 μF of output capacitance. Ceramic, tantalum or

aluminum electrolytic capacitors can all be used for

? Overtemperature Protection

Applications:

input

and

output.

Overcurrent

limit

and

overtemperature shutdown provide a robust solution

for any application.

? Battery-powered Devices

? Battery-powered Alarm Circuits

? Smoke Detectors

Package options include the SOT-23A, SOT-89-3, and

TO-92.

? CO²Detectors

? Pagers and Cellular Phones

? Smart Battery Packs

Package Types

3-Pin SOT-23A

3-Pin SOT-89

? Low Quiescent Current Voltage Reference

? PDAs

V_IN

3

V_IN

? Digital Cameras

? Microcontroller Power

? Solar-Powered Instruments

? Consumer Products

MCP1702

2

1

3

1

2

? Battery Powered Data Loggers

GNDV_INV_OUT

GND V_OUT

Related Literature:

3-Pin TO-92

1 2 3

? AN765, “Using Microchip’s Micropower LDOs”,

DS00765, Microchip Technology Inc., 2002

? AN766, “Pin-Compatible CMOS Upgrades to

Bipolar LDOs”, DS00766,

Microchip Technology Inc., 2002

Bottom

View

? AN792, “A Method to Determine How Much

Power a SOT-23 Can Dissipate in an Application”,

DS00792, Microchip Technology Inc., 2001

GND V_INV_OUT

? 2010 Microchip Technology Inc.

DS22008E-page 1

MCP1702

Functional Block Diagrams

MCP1702

V_OUT

V_IN

Error Amplifier

+V_IN

Voltage

Reference

-

+

Overcurrent

Overtemperature

GND

Typical Application Circuits

MCP1702

V_OUT

3.3V

V_OUT

GND

V_IN

I_OUT

50 mA

V_IN

C_OUT

1 μF Ceramic

+

9V

Battery

C_IN

1 μF Ceramic

DS22008E-page 2

? 2010 Microchip Technology Inc.

MCP1702

? Notice: Stresses above those listed under “Maximum

Ratings” may cause permanent damage to the device. This is

a stress rating only and functional operation of the device at

those or any other conditions above those indicated in the

operational listings of this specification is not implied.

Exposure to maximum rating conditions for extended periods

may affect device reliability.

1.0

ELECTRICAL

CHARACTERISTICS

Absolute Maximum Ratings ?

V

...............................................................................+14.5V

DD

All inputs and outputs w.r.t. .............(V -0.3V) to (V +0.3V)

SS

IN

Peak Output Current ...................................................500 mA

Storage temperature .....................................-65°C to +150°C

Maximum Junction Temperature................................... 150°C

ESD protection on all pins (HBM;MM)??????????????? ??4 kV; ? 400V

DC CHARACTERISTICS

Electrical Specifications: Unless otherwise specified, all limits are established for V = V

+ V

, Note 1,

IN

OUT(MAX)

DROPOUT(MAX)

I

= 100 μA, C

= 1 μF (X7R), C = 1 μF (X7R), T = +25°C.

LOAD

OUT IN A

Boldface type applies for junction temperatures, T of -40°C to +125°C. (Note 7)

J

Parameters

Sym

Min

Typ

Max

Units

Conditions

Input / Output Characteristics

Input Operating Voltage

V

I

2.7

—

13.2

5

V

Note 1

I = 0 mA

IN

Input Quiescent Current

Maximum Output Current

2.0

—

μA

q

L

I

250

50

—

mA

For V ? 2.5V

OUT_mA

R

100

130

200

250

400

For V < 2.5V, V ? 2.7V

R

IN

100

150

200

—

For V < 2.5V, V ? 2.95V

R IN

For V < 2.5V, V ? 3.2V

R

IN

For V < 2.5V, V ? 3.45V

R

IN

Output Short Circuit Current

Output Voltage Regulation

I

V

= V

(Note 1), V

= GND,

OUT_SC

IN

IN(MIN)

OUT

Current (average current) measured

10 ms after short is applied.

V

V -3.0% V ±0.4% V +3.0%

V

Note 2

OUT

R

V -2.0% V ±0.4% V +2.0%

V

R

V -1.0% V ±0.4% V +1.0%

1% Custom

R

V

Temperature

TCV

—

50

—

ppm/°C

Note 3

OUT

Coefficient

Line Regulation

?V

/

-0.3

-2.5

±0.1

±1.0

+0.3

+2.5

%/V

%

(V

+ V

)

OUT

OUT(MAX)

DROPOUT(MAX)

(V

X?V

)

? V ? 13.2V, (Note 1)

IN

OUT

IN

Load Regulation

?V

/V

I = 1.0 mA to 250 mA for V ? 2.5V

L R

OUT OUT

I = 1.0 mA to 200 mA for V ? 2.5V,

L

R

V

= 3.45V (Note 4)

IN

Note 1: The minimum V must meet two conditions: V ???2.7V and V ???V

+ V

.

IN

OUT(MAX)

DROPOUT(MAX)

2:

V is the nominal regulator output voltage. For example: V = 1.2V, 1.5V, 1.8V, 2.5V, 2.8V, 3.0V, 3.3V, 4.0V, or 5.0V. The

R

input voltage V = V

+ V

or V = 2.7V (whichever is greater); I

= 100 μA.

IN

OUT(MAX)

DROPOUT(MAX)

6

IN

OUT

3: TCV

= (V

- V

) *10 / (V * ?Temperature), V

= highest voltage measured over the

OUT-HIGH

OUT

OUT-HIGH

OUT-LOW

R

temperature range. V

= lowest voltage measured over the temperature range.

OUT-LOW

4: Load regulation is measured at a constant junction temperature using low duty cycle pulse testing. Changes in output

voltage due to heating effects are determined using thermal regulation specification TCV

.

OUT

5: Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its measured

value with an applied input voltage of V + V or 2.7V, whichever is greater.

OUT(MAX)

DROPOUT(MAX)

6: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction

temperature and the thermal resistance from junction to air (i.e., T , T , ? ). Exceeding the maximum allowable power

A

J

JA

dissipation will cause the device operating junction temperature to exceed the maximum 150°C rating. Sustained

junction temperatures above 150°C can impact the device reliability.

7: The junction temperature is approximated by soaking the device under test at an ambient temperature equal to the

desired Junction temperature. The test time is small enough such that the rise in the Junction temperature over the

ambient temperature is not significant.

? 2010 Microchip Technology Inc.

DS22008E-page 3

MCP1702

DC CHARACTERISTICS (CONTINUED)

Electrical Specifications: Unless otherwise specified, all limits are established for V = V

+ V

, Note 1,

IN

OUT(MAX)

DROPOUT(MAX)

I

= 100 μA, C

= 1 μF (X7R), C = 1 μF (X7R), T = +25°C.

LOAD

OUT IN A

Boldface type applies for junction temperatures, T of -40°C to +125°C. (Note 7)

J

Parameters

Sym

Min

Typ

Max

Units

Conditions

I = 250 mA, V = 5.0V

Dropout Voltage

(Note 1, Note 5)

V

—

330

525

625

750

—

650

725

975

1100

—

mV

DROPOUT

L

R

I = 250 mA, 3.3V ? V < 5.0V

L

R

I = 250 mA, 2.8V ? V < 3.3V

L

R

I = 250 mA, 2.5V ? V < 2.8V

L

R

V

< 2.5V, See Maximum Output

R

Current Parameter

Output Delay Time

Output Noise

T

—

1000

—

μs

V

= 0V to 6V, V

= 90% V

OUT R

DELAY

IN

R = 50? resistive

L

1/2

e

—

8

—

μV/(Hz)

dB

I = 50 mA, f = 1 kHz, C

= 1 μF

OUT

N

L

Power Supply Ripple

Rejection Ratio

PSRR

44

f = 100 Hz, C

V

= 1 μF, I = 50 mA,

OUT L

= 100 mV pk-pk, C = 0 μF,

INAC

IN

= 1.2V

R

Thermal Shutdown

Protection

T

—

150

—

°C

SD

Note 1: The minimum V must meet two conditions: V ???2.7V and V ???V

+ V

.

IN

OUT(MAX)

DROPOUT(MAX)

2:

V is the nominal regulator output voltage. For example: V = 1.2V, 1.5V, 1.8V, 2.5V, 2.8V, 3.0V, 3.3V, 4.0V, or 5.0V. The

R

input voltage V = V

+ V

or V = 2.7V (whichever is greater); I

= 100 μA.

IN

OUT(MAX)

DROPOUT(MAX)

6

IN

OUT

3: TCV

= (V

- V

) *10 / (V * ?Temperature), V

= highest voltage measured over the

OUT-HIGH

OUT

OUT-HIGH

OUT-LOW

R

temperature range. V

= lowest voltage measured over the temperature range.

OUT-LOW

4: Load regulation is measured at a constant junction temperature using low duty cycle pulse testing. Changes in output

voltage due to heating effects are determined using thermal regulation specification TCV

.

OUT

5: Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its measured

value with an applied input voltage of V + V or 2.7V, whichever is greater.

OUT(MAX)

DROPOUT(MAX)

6: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction

temperature and the thermal resistance from junction to air (i.e., T , T , ? ). Exceeding the maximum allowable power

A

J

JA

dissipation will cause the device operating junction temperature to exceed the maximum 150°C rating. Sustained

junction temperatures above 150°C can impact the device reliability.

7: The junction temperature is approximated by soaking the device under test at an ambient temperature equal to the

desired Junction temperature. The test time is small enough such that the rise in the Junction temperature over the

ambient temperature is not significant.

DS22008E-page 4

? 2010 Microchip Technology Inc.

MCP1702

TEMPERATURE SPECIFICATIONS (Note 1)

Parameters

Temperature Ranges

Sym

Min

Typ

Max

Units

Conditions

Operating Junction Temperature Range

Maximum Junction Temperature

Storage Temperature Range

T

-40

—

+125

+150

°C

Steady State

J

Transient

T

-65

A

Thermal Package Resistance (Note 2)

Thermal Resistance, 3L-SOT-23A

EIA/JEDEC JESD51-7

FR-4 0.063 4-Layer Board

?

—

336

110

—

°C/W

JA

JC

JA

Thermal Resistance, 3L-SOT-89

Thermal Resistance, 3L-TO-92

EIA/JEDEC JESD51-7

FR-4 0.063 4-Layer Board

153.3

?

—

100

131.9

66.3

—

°C/W

JC

JA

JC

Note 1: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction

temperature and the thermal resistance from junction to air (i.e., T , T , ? ). Exceeding the maximum allowable power

A

J

JA

dissipation will cause the device operating junction temperature to exceed the maximum 150°C rating. Sustained

junction temperatures above 150°C can impact the device reliability.

2: Thermal Resistance values are subject to change. Please visit the Microchip web site for the latest packaging

information.

? 2010 Microchip Technology Inc.

DS22008E-page 5

MCP1702

2.0

TYPICAL PERFORMANCE CURVES

Note:

The graphs and tables provided following this note are a statistical summary based on a limited number of

samples and are provided for informational purposes only. The performance characteristics listed herein

are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified

operating range (e.g., outside specified power supply range) and therefore outside the warranted range.

Note: Unless otherwise indicated: V_R= 2.8V, C_OUT= 1 μF Ceramic (X7R), C_IN= 1 μF Ceramic (X7R), I_L= 100 μA,

T_A= +25°C, V_IN= V_OUT(MAX)+ V_DROPOUT(MAX)

.

Note: Junction Temperature (T ) is approximated by soaking the device under test to an ambient temperature equal to the desired junction

J

temperature. The test time is small enough such that the rise in Junction temperature over the Ambient temperature is not significant.

5.00

4.00

3.00

2.00

1.00

0.00

120.00

100.00

80.00

60.00

40.00

20.00

0.00

V_OUT= 1.2V

Temperature = +25°C

V_OUT= 1.2V

+130°C

0°C

V

_IN= 2.7V

+90°C

-45°C

+25°C

2

4

6

8

10

12

14

0

40

80

120

160

200

Input Voltage (V)

Load Current (mA)

FIGURE 2-1:

Quiescent Current vs. Input

FIGURE 2-4:

Ground Current vs. Load

Voltage.

Current.

5.00

4.00

120.00

100.00

80.00

60.00

40.00

20.00

V_OUT= 2.8V

Temperature = +25°C

V_OUT= 5.0V

+130°C

V

_IN= 6.0V

+90°C

-45°C

3.00

+25°C

2.00

1.00

0°C

V_OUT= 2.8V

V

_IN= 3.8V

0.00

3

0.00

0

5

7

9

11

13

50

100

150

200

250

Input Voltage (V)

Load Current (mA)

FIGURE 2-2:

Quiescent Current vs.Input

FIGURE 2-5:

Ground Current vs. Load

Voltage.

Current.

5.00

4.00

3.00

2.00

3.00

V_OUT= 5.0V

I_OUT= 0 mA

V_OUT= 5.0V

V_OUT= 2.8V

V_IN= 3.8V

2.50

2.00

1.50

1.00

0.50

0.00

V

_IN= 6.0V

+130°C

V_OUT= 1.2V

V_IN= 2.7V

+90°C

0°C

+25°C

-45°C

1.00

-45

-20

5

30

55

80

105

130

6

7

8

9

10

11

12

13

14

Junction Temperature (°C)

Input Voltage (V)

FIGURE 2-3:

Quiescent Current vs.Input

FIGURE 2-6:

Quiescent Current vs.

Voltage.

Junction Temperature.

DS22008E-page 6

? 2010 Microchip Technology Inc.

MCP1702

Note: Unless otherwise indicated: V_R= 2.8V, C_OUT= 1 μF Ceramic (X7R), C_IN= 1 μF Ceramic (X7R), I_L= 100 μA,

T_A= +25°C, V_IN= V_OUT(MAX)+ V_DROPOUT(MAX)

.

1.24

1.23

1.22

1.21

1.20

1.19

1.18

V_OUT= 1.2V

I_LOAD= 0.1 mA

V_OUT= 1.2V

0°C

1.23

1.22

1.21

1.20

1.19

1.18

-45°C

0°C

+25°C

+90°C

+130°C

+90°C

10

+25°C

2

4

6

8

12

14

0

20

50

40

60

80

100

Input Voltage (V)

Load Current (mA)

FIGURE 2-7:

Voltage.

Output Voltage vs. Input

FIGURE 2-10:

Current.

Output Voltage vs. Load

2.85

2.83

2.82

2.81

2.80

2.79

2.78

V_OUT= 2.8V

_LOAD= 0.1 mA

V_OUT= 2.8V

2.84

2.83

2.82

2.81

2.80

2.79

2.78

2.77

I

+130°C

+90°C

0°C

-45°C

+25°C

8

-45°C

2.77

3

4

5

6

7

9

10 11 12 13 14

0

100

150

200

250

Input Voltage (V)

Load Current (mA)

FIGURE 2-8:

Voltage.

Output Voltage vs. Input

FIGURE 2-11:

Current.

Output Voltage vs. Load

5.04

5.03

5.02

5.01

5.00

4.99

4.98

V_OUT= 5.0V

_LOAD= 0.1 mA

V_OUT= 5.0V

5.06

5.04

5.02

5.00

4.98

4.96

I

+130°C

+90°C

0°C

-45°C

0°C

+25°C

-45°C

4.97

4.96

6

7

8

9

10

11

12

13

14

0

100

150

200

250

Input Voltage (V)

Load Current (mA)

FIGURE 2-9:

Output Voltage vs. Input

FIGURE 2-12:

Output Voltage vs. Load

Voltage.

Current.

? 2010 Microchip Technology Inc.

DS22008E-page 7

MCP1702

Note: Unless otherwise indicated: V_R= 2.8V, C_OUT= 1 μF Ceramic (X7R), C_IN= 1 μF Ceramic (X7R), I_L= 100 μA,

T_A= +25°C, V_IN= V_OUT(MAX)+ V_DROPOUT(MAX)

.

1.40

V_OUT= 1.8V

+130°C

1.30

1.20

1.10

1.00

0.90

0.80

0.70

0.60

+90°C

+25°C

0°C

-45°C

100

120

140

160

180

200

Load Current (mA)

FIGURE 2-13:

Dropout Voltage vs. Load

FIGURE 2-16:

Dynamic Line Response.

Current.

1.00

0.90

0.80

0.70

0.60

0.50

0.40

0.30

0.20

0.10

0.00

V_OUT= 2.8V

+130°C

+90°C

+25°C

+0°C

-45°C

0

25 50 75 100 125 150 175 200 225 250

Load Current (mA)

FIGURE 2-17:

Dynamic Line Response.

FIGURE 2-14:

Dropout Voltage vs. Load

Current.

600.00

500.00

400.00

300.00

200.00

100.00

0.50

0.45

0.40

0.35

0.30

0.25

0.20

0.15

0.10

0.05

0.00

V_OUT= 2.8V

V_OUT= 5.0V

R_OUT< 0.1?

+130°C

+90°C

+25°C

+0°C

-45°C

0.00

4

6

8

10

12

14

0

25 50 75 100 125 150 175 200 225 250

Load Current (mA)

Input Voltage (V)

FIGURE 2-18:

Input Voltage.

Short Circuit Current vs.

FIGURE 2-15:

Current.

Dropout Voltage vs. Load

DS22008E-page 8

? 2010 Microchip Technology Inc.

MCP1702

Note: Unless otherwise indicated: V_R= 2.8V, C_OUT= 1 μF Ceramic (X7R), C_IN= 1 μF Ceramic (X7R), I_L= 100 μA,

T_A= +25°C, V_IN= V_OUT(MAX)+ V_DROPOUT(MAX)

.

0.20

0.15

0.10

0.05

0.00

0.20

0.16

0.12

0.08

0.04

0.00

V_IN= 6V

V_OUT= 1.2V

_IN= 2.7V to 13.2V

V

1 mA

-0.05

V_IN= 4V

-0.10

-0.15

-0.20

-0.25

-0.30

V_IN= 10V

V_IN= 12V

0 mA

V_IN= 13.2V

100 mA

80

V_OUT= 1.2V

_LOAD= 0.1 mA to 200 mA

I

-45

-20

5

30

55

80

105

130

-45

-20

5

30

55

105

130

Temperature (°C)

FIGURE 2-19:

Load Regulation vs.

FIGURE 2-22:

Line Regulation vs.

Temperature.

0.40

0.30

0.20

V_OUT= 2.8V

_LOAD= 1 mA to 250 mA

V_OUT= 2.8V

V_IN= 3.8V to 13.2V

I

0.16

0.12

0.08

0.04

0.00

250 mA

0.10

0.00

200 mA

-0.10

-0.20

-0.30

-0.40

-0.50

-0.60

V_IN= 6V

V_IN= 10V

V_IN= 3.8V

0 mA

100 mA

V_IN= 13.2V

-45

-20

5

30

55

80

105

130

-45

-20

5

30

55

80

105

130

Temperature (°C)

FIGURE 2-20:

Load Regulation vs.

FIGURE 2-23:

Line Regulation vs.

Temperature.

0.40

0.30

0.20

0.10

0.16

V_OUT= 5.0V

_LOAD= 1 mA to 250 mA

V_OUT= 5.0V

V_IN= 6.0V to 13.2V

I

0.14

0.12

0.10

0.08

0.06

V_IN= 6V

200 mA

250 mA

0 mA

V_IN= 10V

V_IN= 8V

0.00

100 mA

V_IN= 13.2V

105

-0.10

-45

-20

5

30

55

80

130

-45

-20

5

30

55

80

105

130

Temperature (°C)

FIGURE 2-21:

Load Regulation vs.

FIGURE 2-24:

Line Regulation vs.

Temperature.

? 2010 Microchip Technology Inc.

DS22008E-page 9

MCP1702

Note: Unless otherwise indicated: V_R= 2.8V, C_OUT= 1 μF Ceramic (X7R), C_IN= 1 μF Ceramic (X7R), I_L= 100 μA,

T_A= +25°C, V_IN= V_OUT(MAX)+ V_DROPOUT(MAX)

.

0

-10

-20

-30

-40

-50

-60

-70

-80

-90

V_R=1.2V

C_OUT=1.0 μF ceramic X7R

V_IN=2.7V

C_IN=0 μF

I_OUT=1.0 mA

0.01

0.1

1

10

100

1000

Frequency (kHz)

FIGURE 2-25:

Rejection vs. Frequency.

Power Supply Ripple

FIGURE 2-28:

FIGURE 2-29:

FIGURE 2-30:

Power Up Timing.

0

-10

-20

-30

-40

-50

-60

-70

-80

-90

V_R=5.0V

_OUT=1.0 μF ceramic X7R

V_IN=6.0V

_IN=0 μF

_OUT=1.0 mA

C

I

0.01

0.1

1

10

100

1000

Frequency (kHz)

Dynamic Load Response.

FIGURE 2-26:

Rejection vs. Frequency.

Power Supply Ripple

100

I_OUT=50 mA

V_R=5.0V, V_IN=6.0V

10

1

V_R=2,8V, V_IN=3.8V

V_R=1.2V, V_IN=2.7V

0.1

0.01

0.001

0.01

0.1

1

10

100

1000

Frequency (kHz)

Dynamic Load Response.

FIGURE 2-27:

Output Noise vs. Frequency.

DS22008E-page 10

? 2010 Microchip Technology Inc.

MCP1702

3.0

PIN DESCRIPTIONS

The descriptions of the pins are listed in Table 3-1.

TABLE 3-1:

PIN FUNCTION TABLE

Pin No.

SOT-23A

Pin No.

SOT-89

Pin No.

TO-92

Symbol

Function

1

2

3

–

1

3

2

–

GND

V_OUT

V_IN

Ground Terminal

3

2, Tab

–

Regulated Voltage Output

Unregulated Supply Voltage

No connection

NC

3.1

Ground Terminal (GND)

3.3

Unregulated Input Voltage Pin

(V )

IN

Regulator ground. Tie GND to the negative side of the

output and the negative side of the input capacitor.

Only the LDO bias current (2.0 μA typical) flows out of

this pin; there is no high current. The LDO output

regulation is referenced to this pin. Minimize voltage

drops between this pin and the negative side of the

load.

Connect V_INto the input unregulated source voltage.

Like all LDO linear regulators, low source impedance is

necessary for the stable operation of the LDO. The

amount of capacitance required to ensure low source

impedance will depend on the proximity of the input

source capacitors or battery type. For most

applications, 1 μF of capacitance will ensure stable

operation of the LDO circuit. For applications that have

load currents below 100 mA, the input capacitance

requirement can be lowered. The type of capacitor

used can be ceramic, tantalum or aluminum

electrolytic. The low ESR characteristics of the ceramic

will yield better noise and PSRR performance at

high-frequency.

3.2

Regulated Output Voltage (V

)

OUT

Connect V_OUTto the positive side of the load and the

positive terminal of the output capacitor. The positive

side of the output capacitor should be physically

located as close to the LDO V_OUTpin as is practical.

The current flowing out of this pin is equal to the DC

load current.

? 2010 Microchip Technology Inc.

DS22008E-page 11

MCP1702

4.0

4.1

DETAILED DESCRIPTION

Output Regulation

4.3

Overtemperature

A portion of the LDO output voltage is fed back to the

internal error amplifier and compared with the precision

internal band gap reference. The error amplifier output

will adjust the amount of current that flows through the

P-Channel pass transistor, thus regulating the output

voltage to the desired value. Any changes in input

voltage or output current will cause the error amplifier

to respond and adjust the output voltage to the target

voltage (refer to Figure 4-1).

The internal power dissipation within the LDO is a

function of input-to-output voltage differential and load

current. If the power dissipation within the LDO is

excessive, the internal junction temperature will rise

above the typical shutdown threshold of 150°C. At that

point, the LDO will shut down and begin to cool to the

typical turn-on junction temperature of 130°C. If the

power dissipation is low enough, the device will

continue to cool and operate normally. If the power

dissipation remains high, the thermal shutdown

protection circuitry will again turn off the LDO,

protecting it from catastrophic failure.

4.2

Overcurrent

The MCP1702 internal circuitry monitors the amount of

current flowing through the P-Channel pass transistor.

In the event of a short-circuit or excessive output

current, the MCP1702 will turn off the P-Channel

device for a short period, after which the LDO will

attempt to restart. If the excessive current remains, the

cycle will repeat itself.

MCP1702

V_OUT

V_IN

Error Amplifier

+V_IN

Voltage

Reference

-

+

Overcurrent

Overtemperature

GND

FIGURE 4-1:

Block Diagram.

DS22008E-page 12

? 2010 Microchip Technology Inc.

MCP1702

5.2

Output

5.0

FUNCTIONAL DESCRIPTION

The maximum rated continuous output current for the

MCP1702 is 250 mA (V_R? 2.5V). For applications

where V_R< 2.5V, the maximum output current is

200 mA.

The MCP1702 CMOS LDO linear regulator is intended

for applications that need the lowest current

consumption while maintaining output voltage

regulation. The operating continuous load range of the

MCP1702 is from 0 mA to 250 mA (V_R? 2.5V). The

input operating voltage range is from 2.7V to 13.2V,

making it capable of operating from two or more

alkaline cells or single and multiple Li-Ion cell batteries.

A minimum output capacitance of 1.0 μF is required for

small signal stability in applications that have up to

250 mA output current capability. The capacitor type

can be ceramic, tantalum or aluminum electrolytic. The

esr range on the output capacitor can range from 0? to

2.0?.

5.1

Input

The output capacitor range for ceramic capacitors is

1 μF to 22 μF. Higher output capacitance values may

be used for tantalum and electrolytic capacitors. Higher

output capacitor values pull the pole of the LDO

transfer function inward that results in higher phase

shifts which in turn cause a lower crossover frequency.

The circuit designer should verify the stability by

applying line step and load step testing to their system

when using capacitance values greater than 22 μF.

The input of the MCP1702 is connected to the source

of the P-Channel PMOS pass transistor. As with all

LDO circuits, a relatively low source impedance (10?)

is needed to prevent the input impedance from causing

the LDO to become unstable. The size and type of the

capacitor needed depends heavily on the input source

type (battery, power supply) and the output current

range of the application. For most applications (up to

100 mA), a 1 μF ceramic capacitor will be sufficient to

ensure circuit stability. Larger values can be used to

improve circuit AC performance.

5.3

Output Rise Time

When powering up the internal reference output, the

typical output rise time of 500 μs is controlled to

prevent overshoot of the output voltage. There is also a

start-up delay time that ranges from 300 μs to 800 μs

based on loading. The start-up time is separate from

and precedes the Output Rise Time. The total output

delay is the Start-up Delay plus the Output Rise time.

? 2010 Microchip Technology Inc.

DS22008E-page 13

MCP1702

EQUATION 6-2:

T_J?MAX?= P_TOTAL? R?_JA+ T_AMAX

6.0

APPLICATION CIRCUITS AND

ISSUES

Where:

6.1

Typical Application

T_J(MAX)

=

Maximum continuous junction

temperature

The MCP1702 is most commonly used as a voltage

regulator. Its low quiescent current and low dropout

voltage makes it ideal for many battery-powered

applications.

P_TOTAL

Total device power dissipation

R?_JA

Thermal resistance from

junction to ambient

T_AMAX

=

Maximum ambient temperature

MCP1702

V

IN

The maximum power dissipation capability for a

package can be calculated given the junction-to-

ambient thermal resistance and the maximum ambient

temperature for the application. The following equation

can be used to determine the package maximum

internal power dissipation.

GND

(2.8V to 3.2V)

V

OUT

V

IN

1.8V

C

IN

V

OUT

1 μF Ceramic

I

OUT

C

OUT

150 mA

1 μF Ceramic

EQUATION 6-3:

FIGURE 6-1:

Typical Application Circuit.

?T_J?MAX?– T_A?MAX??

6.1.1

APPLICATION INPUT CONDITIONS

Package Type = SOT-23A

P_D?MAX?= ---------------------------------------------------

R?_JA

Where:

Input Voltage Range = 2.8V to 3.2V

V_INmaximum = 3.2V

P_D(MAX)

=

Maximum device power

dissipation

V_OUTtypical = 1.8V

T_J(MAX)

Maximum continuous junction

temperature

I_OUT= 150 mA maximum

T_A(MAX)

Maximum ambient temperature

6.2

6.2.1

Power Calculations

R?_JA

=

Thermal resistance from

junction to ambient

POWER DISSIPATION

The internal power dissipation of the MCP1702 is a

function of input voltage, output voltage and output

current. The power dissipation, as a result of the

quiescent current draw, is so low, it is insignificant

(2.0 μA x V_IN). The following equation can be used to

calculate the internal power dissipation of the LDO.

EQUATION 6-4:

T_J?RISE?= P_D?MAX?? R?_JA

Where:

T_J(RISE)

=

Rise in device junction

temperature over the ambient

temperature

EQUATION 6-1:

P_LDO= ?V_IN?MAX??– V_OUT?MIN?? ? I_{OUT?MAX ??}

P_TOTAL

Maximum device power

dissipation

Where:

R?_JA

Thermal resistance from

junction to ambient

P_LDO

=

LDO Pass device internal

power dissipation

V_IN(MAX)

=

Maximum input voltage

EQUATION 6-5:

V_OUT(MIN)

LDO minimum output voltage

T_J= T_J?RISE?+ T_A

The maximum continuous operating junction

temperature specified for the MCP1702 is +125°C. To

estimate the internal junction temperature of the

MCP1702, the total internal power dissipation is

multiplied by the thermal resistance from junction to

ambient (R?_JA). The thermal resistance from junction to

ambient for the SOT-23A pin package is estimated at

336°C/W.

Where:

T_J

=

Junction Temperature

T_J(RISE)

Rise in device junction

temperature over the ambient

temperature

T_A

Ambient temperature

DS22008E-page 14

? 2010 Microchip Technology Inc.

MCP1702

6.3

Voltage Regulator

Junction Temperature Estimate

Internal power dissipation, junction temperature rise,

junction temperature and maximum power dissipation

are calculated in the following example. The power

dissipation, as a result of ground current, is small

enough to be neglected.

To estimate the internal junction temperature, the

calculated temperature rise is added to the ambient or

offset temperature. For this example, the worst-case

junction temperature is estimated below.

T_J

=

T_JRISE+ T_A(MAX)

113.3°C

6.3.1

POWER DISSIPATION EXAMPLE

Package

Maximum Package Power Dissipation at +40°C

Ambient Temperature Assuming Minimal Copper

Usage.

Package Type

Input Voltage

V_IN

=

SOT-23A

2.8V to 3.2V

SOT-23 (336.0°C/Watt = R?_JA

)

LDO Output Voltages and Currents

P_D(MAX)

=

(+125°C - 40°C) / 336°C/W

253 milli-Watts

V_OUT

I_OUT

=

1.8V

150 mA

SOT-89 (153.3°C/Watt = R?_JA

)

Maximum Ambient Temperature

T_A(MAX)+40°C

P_D(MAX)

=

(+125°C - 40°C) / 153.3°C/W

0.554 Watts

=

Internal Power Dissipation

TO92 (131.9°C/Watt = R?_JA

)

Internal Power dissipation is the product of the LDO

output current times the voltage across the LDO

(V_INto V_OUT).

P_D(MAX)

=

(+125°C - 40°C) / 131.9°C/W

644 milli-Watts

P_LDO(MAX)

=

(V_IN(MAX)- V_OUT(MIN)) x

I_OUT(MAX)

6.4

Voltage Reference

The MCP1702 can be used not only as a regulator, but

also as a low quiescent current voltage reference. In

many microcontroller applications, the initial accuracy

of the reference can be calibrated using production test

equipment or by using a ratio measurement. When the

initial accuracy is calibrated, the thermal stability and

line regulation tolerance are the only errors introduced

by the MCP1702 LDO. The low-cost, low quiescent

current and small ceramic output capacitor are all

advantages when using the MCP1702 as a voltage

reference.

P_LDO

=

(3.2V - (0.97 x 1.8V)) x 150 mA

218.1 milli-Watts

Device Junction Temperature Rise

The internal junction temperature rise is a function of

internal power dissipation and the thermal resistance

from junction to ambient for the application. The

thermal resistance from junction to ambient (R?_JA) is

derived from an EIA/JEDEC standard for measuring

thermal resistance for small surface mount packages.

The EIA/JEDEC specification is JESD51-7, “High

Effective Thermal Conductivity Test Board for Leaded

Surface Mount Packages”. The standard describes the

test method and board specifications for measuring the

thermal resistance from junction to ambient. The actual

thermal resistance for a particular application can vary

depending on many factors, such as copper area and

thickness. Refer to AN792, “A Method to Determine

How Much Power a SOT-23 Can Dissipate in an

Application”, (DS00792), for more information

regarding this subject.

Ratio Metric Reference

?

2 μA Bias

MCP1702

PIC

Microcontroller

V

IN

C

1 μF

IN

V

REF

V

OUT

C

1 μF

OUT

GND

ADO

AD1

Bridge Sensor

T_J(RISE)

T_JRISE

=

P_TOTALx Rq_JA

218.1 milli-Watts x 336.0°C/Watt

73.3°C

FIGURE 6-2:

Voltage Reference.

Using the MCP1702 as a

? 2010 Microchip Technology Inc.

DS22008E-page 15

MCP1702

6.5

Pulsed Load Applications

For some applications, there are pulsed load current

events that may exceed the specified 250 mA

maximum specification of the MCP1702. The internal

current limit of the MCP1702 will prevent high peak

load demands from causing non-recoverable damage.

The 250 mA rating is a maximum average continuous

rating. As long as the average current does not exceed

250 mA, pulsed higher load currents can be applied to

the MCP1702. The typical current limit for the

MCP1702 is 500 mA (T_A+25°C).

DS22008E-page 16

? 2010 Microchip Technology Inc.

MCP1702

7.0

7.1

PACKAGING INFORMATION

Package Marking Information

3-Pin SOT-23A

Example:

Standard

Extended Temp

Symbol

Voltage *

Symbol

Voltage *

HA

HB

HC

HD

HE

1.2

1.5

1.8

2.5

2.8

HF

HG

HH

HJ

—

3.0

3.3

4.0

5.0

—

HANN

XXNN

Custom

GA

GB

4.5

2.2

GC

GD

2.1

4.1

* Custom output voltages available upon request.

Contact your local Microchip sales office for more information.

Standard

3-Lead SOT-89

Example:

Extended Temp

Symbol

Voltage *

Symbol

Voltage *

HA

HB

HC

HD

HE

1.2

1.5

1.8

2.5

2.8

HF

HG

HK

HH

HJ

3.0

3.3

3.6

4.0

5.0

XXXYYWW

NNN

HA1014

256

Custom

LA

LB

2.1

3.2

H9

—

4.2

—

3-Lead TO-92

Example:

* Custom output voltages available upon request.

Contact your local Microchip sales office for more information.

1702

XXXXXX

YWWNNN

1202E

e

3

TO^^

014256

Legend: XX...X Customer-specific information

Y

Year code (last digit of calendar year)

YY

WW

NNN

Year code (last 2 digits of calendar year)

Week code (week of January 1 is week ‘01’)

Alphanumeric traceability code

e

3

Pb-free JEDEC designator for Matte Tin (Sn)

This package is Pb-free. The Pb-free JEDEC designator (

can be found on the outer packaging for this package.

*

)

e

3

Note: In the event the full Microchip part number cannot be marked on one line, it will

be carried over to the next line, thus limiting the number of available

characters for customer-specific information.

? 2010 Microchip Technology Inc.

DS22008E-page 17

MCP1702

??????????????????????????????????????????????????????

???? .???#????? #??$????#????/????!??-??? 0????? ?? ???#?????????????1??/???????????%???#????????#?!??#?

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E1

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)?*+ )? ???????? ???????????#????????&??#?,??$?? ??-??-?#??$#?#???????? ?

????????? ?????????? ???-??? *??????)

DS22008E-page 18

? 2010 Microchip Technology Inc.

MCP1702

Note: For the most current package drawings, please see the Microchip Packaging Specification located at

http://www.microchip.com/packaging

? 2010 Microchip Technology Inc.

DS22008E-page 19

MCP1702

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?? ????? ?????????!?#??????????????????"?'???(??

)?*+ )? ???????? ???????????#????????&??#?,??$?? ??-??-?#??$#?#???????? ?

????????? ?????????? ???-??? *??????)

DS22008E-page 20

? 2010 Microchip Technology Inc.

MCP1702

Note: For the most current package drawings, please see the Microchip Packaging Specification located at

http://www.microchip.com/packaging

? 2010 Microchip Technology Inc.

DS22008E-page 21

MCP1702

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b

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????????? ?????????? ???-??? *??????)

DS22008E-page 22

? 2010 Microchip Technology Inc.

MCP1702

APPENDIX A: REVISION HISTORY

Revision E (November 2010)

The following is the list of modifications:

1. Updated the Thermal Resistance Typical value

for the SOT-89 package in the Junction

Temperature Estimate section.

Revision D (June 2009)

The following is the list of modifications:

1. DC Characteristics table: Updated the V_OUT

Temperature Coefficient’s maximum value.

2. Section 7.0

“Packaging

Information”:

Updated package outline drawings.

Revision C (November 2008)

The following is the list of modifications:

1. DC Characteristics table: Added row to Output

Voltage Regulation for 1% custom part.

2. Temperature Specifications table: Numerous

changes to table.

3. Added Note 2 to Temperature Specifications

table.

4. Section 5.0

Section 5.2

paragraph.

“Functional

“Output”:

Description”,

Added second

5. Section 7.0 “Packaging Information”: Added

1% custom part information to this section. Also,

updated package outline drawings.

6. Product Identification System: Added 1%

custom part information to this page.

Revision B (May 2007)

The following is the list of modifications:

1. All Pages: Corrected minor errors in document.

2. Page 4: Added junction-to-case information to

Temperature Specifications table.

3. Page 16: Updated Package Outline Drawings in

Section 7.0 “Packaging Information”.

4. Page 21: Updated Revision History.

5. Page 23: Corrected examples in Product

Identification System.

Revision A (September 2006)

? Original Release of this Document.

? 2010 Microchip Technology Inc.

DS22008E-page 23

MCP1702

PRODUCT IDENTIFICATION SYSTEM

To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office.

Examples:

PART NO.

Device

X-

XX

X

X/

XX

a)

b)

c)

d)

e)

f)

MCP1702T-1202E/CB: 1.2V LDO Positive

Tape

and Reel Voltage

Output Feature Tolerance Temp. Package

Voltage Regulator,

SOT-23A-3 pkg.

Code

MCP1702T-1802E/MB: 1.8V LDO Positive

Voltage Regulator,

Device:

MCP1702: 2 μA Low Dropout Positive Voltage Regulator

SOT-89-3 pkg.

MCP1702T-2502E/CB: 2.5V LDO Positive

Voltage Regulator,

Tape and Reel:

Output Voltage *:

T

=

Tape and Reel

SOT-23A-3 pkg.

MCP1702T-3002E/CB: 3.0V LDO Positive

Voltage Regulator,

12

15

18

25

28

30

33

40

50

=

1.2V “Standard”

1.5V “Standard”

1.8V “Standard”

2.5V “Standard”

2.8V “Standard”

3.0V “Standard”

3.3V “Standard”

4.0V “Standard”

5.0V “Standard”

SOT-23A-3 pkg.

MCP1702T-3002E/MB: 3.0V LDO Positive

Voltage Regulator,

SOT-89-3 pkg.

MCP1702T-3302E/CB: 3.3V LDO Positive

Voltage Regulator,

*Contact factory for other output voltage options.

SOT-23A-3 pkg.

g)

h)

i)

MCP1702T-3302E/MB: 3.3V LDO Positive

Voltage Regulator,

Extra Feature Code:

Tolerance:

0

=

Fixed

SOT-89-3 pkg.

2

1

=

2.0% (Standard)

1.0% (Custom)

MCP1702T-4002E/CB: 4.0V LDO Positive

Voltage Regulator,

SOT-23A-3 pkg.

MCP1702-5002E/TO: 5.0V LDO Positive

Voltage Regulator,

Temperature:

Package Type:

E

=

-40?C to +125?C

TO-92 pkg.

CB

MB

TO

=

Plastic Small Outline Transistor (SOT-23A)

(equivalent to EIAJ SC-59), 3-lead,

Plastic Small Outline Transistor Header, (SOT-89),

3-lead

j)

MCP1702T-5002E/CB: 5.0V LDO Positive

Voltage Regulator,

SOT-23A-3 pkg.

Plastic Transistor Outline (TO-92), 3-lead

k)

MCP1702T-5002E/MB: 5.0V LDO Positive

Voltage Regulator,

SOT-89-3 pkg.

DS22008E-page 24

? 2010 Microchip Technology Inc.

Note the following details of the code protection feature on Microchip devices:

?

Microchip products meet the specification contained in their particular Microchip Data Sheet.

?

Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the

intended manner and under normal conditions.

?

There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our

knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data

Sheets. Most likely, the person doing so is engaged in theft of intellectual property.

?

Microchip is willing to work with the customer who is concerned about the integrity of their code.

Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not

mean that we are guaranteeing the product as “unbreakable.”

Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our

products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts

allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act.

Information contained in this publication regarding device

applications and the like is provided only for your convenience

and may be superseded by updates. It is your responsibility to

ensure that your application meets with your specifications.

MICROCHIP MAKES NO REPRESENTATIONS OR

WARRANTIES OF ANY KIND WHETHER EXPRESS OR

IMPLIED, WRITTEN OR ORAL, STATUTORY OR

OTHERWISE, RELATED TO THE INFORMATION,

INCLUDING BUT NOT LIMITED TO ITS CONDITION,

QUALITY, PERFORMANCE, MERCHANTABILITY OR

FITNESS FOR PURPOSE. Microchip disclaims all liability

arising from this information and its use. Use of Microchip

devices in life support and/or safety applications is entirely at

the buyer’s risk, and the buyer agrees to defend, indemnify and

hold harmless Microchip from any and all damages, claims,

suits, or expenses resulting from such use. No licenses are

conveyed, implicitly or otherwise, under any Microchip

intellectual property rights.

Trademarks

The Microchip name and logo, the Microchip logo, dsPIC,

KEELOQ, KEELOQ logo, MPLAB, PIC, PICmicro, PICSTART,

32

PIC logo, rfPIC and UNI/O are registered trademarks of

Microchip Technology Incorporated in the U.S.A. and other

countries.

FilterLab, Hampshire, HI-TECH C, Linear Active Thermistor,

MXDEV, MXLAB, SEEVAL and The Embedded Control

Solutions Company are registered trademarks of Microchip

Technology Incorporated in the U.S.A.

Analog-for-the-Digital Age, Application Maestro, CodeGuard,

dsPICDEM, dsPICDEM.net, dsPICworks, dsSPEAK, ECAN,

ECONOMONITOR, FanSense, HI-TIDE, In-Circuit Serial

Programming, ICSP, Mindi, MiWi, MPASM, MPLAB Certified

logo, MPLIB, MPLINK, mTouch, Omniscient Code

Generation, PICC, PICC-18, PICDEM, PICDEM.net, PICkit,

PICtail, REAL ICE, rfLAB, Select Mode, Total Endurance,

TSHARC, UniWinDriver, WiperLock and ZENA are

trademarks of Microchip Technology Incorporated in the

U.S.A. and other countries.

SQTP is a service mark of Microchip Technology Incorporated

in the U.S.A.

All other trademarks mentioned herein are property of their

respective companies.

? 2010, Microchip Technology Incorporated, Printed in the

Printed on recycled paper.

ISBN: 978-1-60932-690-6

Microchip received ISO/TS-16949:2002 certification for its worldwide

headquarters, design and wafer fabrication facilities in Chandler and

Tempe, Arizona; Gresham, Oregon and design centers in California

and India. The Company’s quality system processes and procedures

are for its PIC^?MCUs and dsPIC^?DSCs, KEELOQ^?code hopping

devices, Serial EEPROMs, microperipherals, nonvolatile memory and

analog products. In addition, Microchip’s quality system for the design

and manufacture of development systems is ISO 9001:2000 certified.

? 2010 Microchip Technology Inc.

DS22008E-page 25

Worldwide Sales and Service

AMERICAS

ASIA/PACIFIC

EUROPE

Corporate Office

Asia Pacific Office

Suites 3707-14, 37th Floor

Tower 6, The Gateway

Harbour City, Kowloon

Hong Kong

Tel: 852-2401-1200

Fax: 852-2401-3431

India - Bangalore

Tel: 91-80-3090-4444

Fax: 91-80-3090-4123

Austria - Wels

Tel: 43-7242-2244-39

Fax: 43-7242-2244-393

2355 West Chandler Blvd.

Chandler, AZ 85224-6199

Tel: 480-792-7200

Fax: 480-792-7277

Technical Support:

http://support.microchip.com

Web Address:

www.microchip.com

Denmark - Copenhagen

Tel: 45-4450-2828

Fax: 45-4485-2829

India - New Delhi

Tel: 91-11-4160-8631

Fax: 91-11-4160-8632

France - Paris

Tel: 33-1-69-53-63-20

Fax: 33-1-69-30-90-79

India - Pune

Tel: 91-20-2566-1512

Fax: 91-20-2566-1513

Australia - Sydney

Tel: 61-2-9868-6733

Fax: 61-2-9868-6755

Atlanta

Duluth, GA

Tel: 678-957-9614

Fax: 678-957-1455

Germany - Munich

Tel: 49-89-627-144-0

Fax: 49-89-627-144-44

Japan - Yokohama

Tel: 81-45-471- 6166

Fax: 81-45-471-6122

China - Beijing

Tel: 86-10-8528-2100

Fax: 86-10-8528-2104

Italy - Milan

Tel: 39-0331-742611

Fax: 39-0331-466781

Korea - Daegu

Tel: 82-53-744-4301

Fax: 82-53-744-4302

Boston

China - Chengdu

Tel: 86-28-8665-5511

Fax: 86-28-8665-7889

Westborough, MA

Tel: 774-760-0087

Fax: 774-760-0088

Netherlands - Drunen

Tel: 31-416-690399

Fax: 31-416-690340

Korea - Seoul

China - Chongqing

Tel: 86-23-8980-9588

Fax: 86-23-8980-9500

Tel: 82-2-554-7200

Fax: 82-2-558-5932 or

82-2-558-5934

Chicago

Itasca, IL

Tel: 630-285-0071

Fax: 630-285-0075

Spain - Madrid

Tel: 34-91-708-08-90

Fax: 34-91-708-08-91

China - Hong Kong SAR

Tel: 852-2401-1200

Fax: 852-2401-3431

Malaysia - Kuala Lumpur

Tel: 60-3-6201-9857

Fax: 60-3-6201-9859

Cleveland

UK - Wokingham

Tel: 44-118-921-5869

Fax: 44-118-921-5820

Independence, OH

Tel: 216-447-0464

Fax: 216-447-0643

China - Nanjing

Tel: 86-25-8473-2460

Fax: 86-25-8473-2470

Malaysia - Penang

Tel: 60-4-227-8870

Fax: 60-4-227-4068

Dallas

Addison, TX

Tel: 972-818-7423

Fax: 972-818-2924

China - Qingdao

Tel: 86-532-8502-7355

Fax: 86-532-8502-7205

Philippines - Manila

Tel: 63-2-634-9065

Fax: 63-2-634-9069

Detroit

China - Shanghai

Tel: 86-21-5407-5533

Fax: 86-21-5407-5066

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Tel: 65-6334-8870

Fax: 65-6334-8850

Farmington Hills, MI

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Fax: 248-538-2260

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Fax: 86-24-2334-2393

Taiwan - Hsin Chu

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Fax: 886-3-6578-370

Kokomo

Kokomo, IN

Tel: 765-864-8360

Fax: 765-864-8387

China - Shenzhen

Tel: 86-755-8203-2660

Fax: 86-755-8203-1760

Taiwan - Kaohsiung

Tel: 886-7-213-7830

Fax: 886-7-330-9305

Los Angeles

Mission Viejo, CA

Tel: 949-462-9523

Fax: 949-462-9608

China - Wuhan

Tel: 86-27-5980-5300

Fax: 86-27-5980-5118

Taiwan - Taipei

Tel: 886-2-2500-6610

Fax: 886-2-2508-0102

Santa Clara

China - Xian

Tel: 86-29-8833-7252

Fax: 86-29-8833-7256

Thailand - Bangkok

Tel: 66-2-694-1351

Fax: 66-2-694-1350

Santa Clara, CA

Tel: 408-961-6444

Fax: 408-961-6445

China - Xiamen

Tel: 86-592-2388138

Fax: 86-592-2388130

Toronto

Mississauga, Ontario,

Canada

Tel: 905-673-0699

Fax: 905-673-6509

China - Zhuhai

Tel: 86-756-3210040

Fax: 86-756-3210049

08/04/10

DS22008E-page 26

? 2010 Microchip Technology Inc.

型號:	MCP1702-3602E/TO
是否無鉛：	不含鉛
是否Rohs認證：	符合
生命周期：	Active
IHS 制造商：	MICROCHIP TECHNOLOGY INC
包裝說明：	TO-92, 3PIN
Reach Compliance Code：	compliant
Factory Lead Time：	14 weeks
風險等級：	1.77
Samacsys Description：	Microchip MCP1702-3602E/TO, LDO Voltage Regulator, 250mA, 3.6 V 2%, 2.7 → 13.2 Vin, 3-Pin TO-92
可調性：	FIXED
最大回動電壓 1：	0.75 V
標稱回動電壓 1：	0.525 V
最大絕對輸入電壓：	14.5 V
最大輸入電壓：	13.2 V
最小輸入電壓：	4.458 V
JESD-30 代碼：	O-PBCY-T3
JESD-609代碼：	e3
最大電網調整率：	0.0944136%
最大負載調整率：	0.09%
功能數量：	1
輸出次數：	1
端子數量：	3
工作溫度TJ-Max：	125 °C
工作溫度TJ-Min：	-40 °C
最大輸出電壓 1：	3.708 V
最小輸出電壓 1：	3.492 V
標稱輸出電壓 1：	3.6 V
封裝主體材料：	PLASTIC/EPOXY
封裝代碼：	TO-92
封裝等效代碼：	SIP3,.1,50
封裝形狀：	ROUND
封裝形式：	CYLINDRICAL
認證狀態(tài)：	Not Qualified
調節(jié)器類型：	FIXED POSITIVE SINGLE OUTPUT LDO REGULATOR
篩選級別：	TS 16949
子類別：	Other Regulators
表面貼裝：	NO
技術：	CMOS
端子面層：	Matte Tin (Sn) - annealed
端子形式：	THROUGH-HOLE
端子位置：	BOTTOM
最大電壓容差：	2%

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