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  • 北京元坤偉業(yè)科技有限公司

         該會員已使用本站17年以上

  • AP2213D-3.3TRE1
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  • 深圳市芯福林電子有限公司

     該會員已使用本站15年以上
  • AP2213D-3.3TRE1
  • 數(shù)量85000 
  • 廠家BCD 
  • 封裝SOT252 
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  • 深圳市得捷芯城科技有限公司

     該會員已使用本站11年以上
  • AP2213D-3.3TRE1
  • 數(shù)量3325 
  • 廠家BCD 
  • 封裝NA/ 
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  • 集好芯城

     該會員已使用本站13年以上
  • AP2213D-3.3TRE1
  • 數(shù)量18885 
  • 廠家BCD 
  • 封裝TO-252 
  • 批號最新批次 
  • 原裝原廠 現(xiàn)貨現(xiàn)賣
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  • 北京中其偉業(yè)科技有限公司

     該會員已使用本站16年以上
  • AP2213D-3.3TRE1
  • 數(shù)量200 
  • 廠家BCD 
  • 封裝 
  • 批號16+ 
  • 特價,原裝正品,絕對公司現(xiàn)貨庫存,原裝特價!
  • QQ:2880824479QQ：2880824479 復(fù)制
  • 010-62104891 QQ:2880824479
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  • 深圳市驚羽科技有限公司

     該會員已使用本站11年以上
  • AP2213D-3.3TRE1
  • 數(shù)量9328 
  • 廠家DIODES-美臺 
  • 封裝TO-252-2 
  • 批號▉▉：2年內(nèi) 
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  • 深圳市華芯盛世科技有限公司

     該會員已使用本站13年以上
  • AP2213D-3.3TRE1
  • 數(shù)量865000 
  • 廠家BCD 
  • 封裝SOT252 
  • 批號最新批號 
  • 一級代理,原裝特價現(xiàn)貨！
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  • 深圳市創(chuàng)芯聯(lián)科技有限公司

     該會員已使用本站9年以上
  • AP2213D-3.3TRE1
  • 數(shù)量13000 
  • 廠家BCD 
  • 封裝TO252 
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  • 原廠貨源/正品保證，誠信經(jīng)營，歡迎詢價
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  • 0755-23606513 QQ:1219895042QQ:3061298850
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  • 深圳市鵬睿康科技有限公司

     該會員已使用本站16年以上
  • AP2213D-3.3TRE1
  • 數(shù)量50000 
  • 廠家Diodes Zetex 
  • 封裝只做原裝 
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  • 深圳市惠諾德電子有限公司

     該會員已使用本站7年以上
  • AP2213D-3.3TRE1
  • 數(shù)量29500 
  • 廠家Diodes Incorporated 
  • 封裝IC REG LINEAR 3V 500MA TO252-2 
  • 批號21+ 
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  • 深圳市匯滿鑫電子科技有限公司

     該會員已使用本站3年以上
  • AP2213D-3.3TRE1
  • 數(shù)量2021 
  • 廠家回收IC 
  • 封裝回收公司呆料 回收此型號 尋找代理渠道 
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  • 萬三科技(深圳)有限公司

     該會員已使用本站2年以上
  • AP2213D-3.3TRE1
  • 數(shù)量660000 
  • 廠家Diodes Incorporated 
  • 封裝原廠原裝 
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  • 萬三科技(深圳)有限公司

     該會員已使用本站2年以上
  • AP2213D-3.3TRE1
  • 數(shù)量6500000 
  • 廠家美臺 
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  • 深圳市明燊電子有限公司

     該會員已使用本站9年以上
  • AP2213D-3.3TRE1
  • 數(shù)量2500 
  • 廠家DIODES 
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  • 深圳市楷興電子科技有限公司

     該會員已使用本站7年以上
  • AP2213D-3.3TRE1
  • 數(shù)量10500 
  • 廠家BCD 
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  • AP2213D-3.3TRE1圖

  • 深圳市科慶電子有限公司

     該會員已使用本站16年以上
  • AP2213D-3.3TRE1
  • 數(shù)量25000 
  • 廠家BCD 
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  • 0755 QQ:2850188252QQ:2850188256
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  • 昂富（深圳）電子科技有限公司

     該會員已使用本站4年以上
  • AP2213D-3.3TRE1
  • 數(shù)量34933 
  • 廠家DIODES/美臺 
  • 封裝TO2522 
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  • 深圳市瑞天芯科技有限公司

     該會員已使用本站7年以上
  • AP2213D-3.3TRE1
  • 數(shù)量20000 
  • 廠家BCD 
  • 封裝SOT252 
  • 批號22+ 
  • 深圳現(xiàn)貨庫存，保證原裝正品
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  • 華富芯（深圳）智能科技有限公司

     該會員已使用本站7年以上
  • AP2213D-3.3TRE1
  • 數(shù)量15000 
  • 廠家BCD 
  • 封裝SOT252 
  • 批號22+ 
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  • 深圳市澳億芯電子

     該會員已使用本站13年以上
  • AP2213D-3.3TRE1
  • 數(shù)量0 
  • 廠家BCD 
  • 封裝TO252 
  • 批號 
  • 原裝正品
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  • AP2213D-3.3TRE1圖

  • 深圳市晨豪科技有限公司

     該會員已使用本站12年以上
  • AP2213D-3.3TRE1
  • 數(shù)量89630 
  • 廠家DIODES/美臺 
  • 封裝TO-252 
  • 批號23+ 
  • 當天發(fā)貨全新原裝現(xiàn)貨
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  • 深圳市硅諾電子科技有限公司

     該會員已使用本站8年以上
  • AP2213D-3.3TRE1
  • 數(shù)量45177 
  • 廠家BCD 
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  • 深圳市一線半導(dǎo)體有限公司

     該會員已使用本站11年以上
  • AP2213D-3.3TRE1
  • 數(shù)量9029 
  • 廠家Diodes Incorporated 
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  • 深圳市科雨電子有限公司

     該會員已使用本站9年以上
  • AP2213D-3.3TRE1
  • 數(shù)量2500 
  • 廠家DIODES 
  • 封裝TO252-2 
  • 批號24+ 
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產(chǎn)品型號AP2213D-3.3TRE1的概述

AP2213D-3.3TRE1芯片概述 AP2213D-3.3TRE1是一款高性能、低壓差線性穩(wěn)壓器（LDO），主要用于提供穩(wěn)定的電源輸出，適合各種低功耗電子設(shè)備。隨著現(xiàn)代電子技術(shù)的快速發(fā)展，設(shè)備對電源管理的需求不斷增加。而AP2213D-3.3TRE1憑借其出色的性能和應(yīng)用靈活性，成為了市場上的熱門選擇之一。 AP2213D-3.3TRE1的主要特點是其低壓差特性，使其能夠在輸入電壓和輸出電壓之間僅需很小的差異即可穩(wěn)定輸出所需的電壓。這一特性使得這個芯片特別適用于電池供電的設(shè)備，如移動電話、平板電腦、便攜式音頻播放器等。此外，AP2213D-3.3TRE1具有較低的靜態(tài)電流，進一步提高了電池的使用效率。 AP2213D-3.3TRE1的詳細參數(shù) AP2213D-3.3TRE1的技術(shù)參數(shù)包括： - 輸出電壓：3.3V - 輸入電壓范圍：2.5V至5.5V - 最大輸出電流：1A - 靜...

產(chǎn)品型號AP2213D-3.3TRE1的Datasheet PDF文件預(yù)覽

Data Sheet  
500mA LOW NOISE LDO REGULATOR  
AP2213  
General Description  
Features  
The AP2213 is a 500mA output current fixed voltage  
regulator which provides low noise, very low dropout  
voltage (typically 350mV at 500mA), very low  
standby current (1μA maximum) and excellent power  
supply ripple rejection (PSRR 75dB at 100Hz) in bat-  
tery powered applications, such as handsets and PDAs  
and in noise sensitive applications, such as RF elec-  
tronics.  
·
·
·
Up to 500mA Output Current  
Low Standby Current  
Low Dropout Voltage: V  
=350mV at 500mA  
DROP  
·
·
High Output Accuracy: ±1%  
Good Ripple Rejection Ability: 75dB at 100Hz  
and I =100μA  
OUT  
·
·
·
·
·
·
Tight Load and Line Regulation  
Low Temperature Coefficient  
Over Current Protection  
Thermal Protection  
Reversed-battery Protection  
Logic-controlled Enable  
The AP2213 features individual logic compatible  
enable/shutdown control inputs, a low power shut-  
down mode for extended battery life, over current pro-  
tection, over temperature protection, as well as  
reversed-battery protection.  
Applications  
The AP2213 has 2.5V, 3.0V and 3.3V versions.  
·
·
·
·
Laptop, Notebook, and Palmtop Computer  
CD-ROM, CD-R/RW, DVD Driver  
Portable Electronic  
The AP2213 is available in TO-252-2 (1) and SOIC-8  
packages.  
PC Peripheral  
SOIC-8  
TO-252-2 (1)  
Figure 1. Package Types of AP2213  
Mar. 2007 Rev. 1. 2  
BCD Semiconductor Manufacturing Limited  
1
Data Sheet  
500mA LOW NOISE LDO REGULATOR  
AP2213  
Pin Configuration  
D Package  
M Package  
(SOIC-8)  
(TO-252-2 (1))  
GND  
EN  
VIN  
1
8
7
6
5
VOUT  
3
2
1
GND  
GND  
GND  
2
3
4
GND  
VIN  
VOUT  
BYP  
Figure 2. Pin Configuration of AP2213 (Top View)  
Pin Description  
Pin Number  
Pin Name  
Function  
TO-252-2 (1)  
SOIC-8  
3
2
1
3
VOUT  
GND  
VIN  
Regulated output voltage  
Ground  
5, 6, 7, 8  
2
1
Input Voltage  
EN  
Enable input: CMOS or TTL compatible input. Logic high=enable,  
logic low=shutdown  
4
BYP  
Bypass capacitor for low noise operation  
Mar. 2007 Rev. 1. 2  
BCD Semiconductor Manufacturing Limited  
2
Data Sheet  
500mA LOW NOISE LDO REGULATOR  
AP2213  
Functional Block Diagram  
3 (3)  
1 (2)  
VIN  
VOUT  
(4)  
BYP  
+
-
Bandgap  
Ref.  
A (B)  
A for TO-252-2 (1)  
B for SOIC-8  
(1)  
EN  
Current Limit  
Thermal Shutdown  
2 (5, 6, 7, 8)  
GND  
Figure 3. Functional Block Diagram of AP2213  
Mar. 2007 Rev. 1. 2  
BCD Semiconductor Manufacturing Limited  
3
Data Sheet  
500mA LOW NOISE LDO REGULATOR  
AP2213  
Ordering Information  
AP2213  
-
E1: Lead Free  
Circuit Type  
TR: Tape and Reel  
Blank: Tube  
Package  
2.5: Fixed Output 2.5V  
3.0: Fixed Output 3.0V  
3.3: Fixed Output 3.3V  
D: TO-252-2 (1)  
M: SOIC-8  
Package  
Temperature Range  
Part Number  
Marking ID  
Packing Type  
AP2213D-2.5E1  
AP2213D-2.5E1  
AP2213D-2.5E1  
AP2213D-3.0E1  
AP2213D-3.0E1  
AP2213D-3.3E1  
AP2213D-3.3E1  
2213M-2.5E1  
Tube  
Tape & Reel  
Tube  
AP2213D-2.5TRE1  
AP2213D-3.0E1  
-40 to 125oC  
TO-252-2 (1)  
AP2213D-3.0TRE1  
AP2213D-3.3E1  
Tape & Reel  
Tube  
AP2213D-3.3TRE1  
AP2213M-2.5E1  
AP2213M-2.5TRE1  
AP2213M-3.0E1  
AP2213M-3.0TRE1  
AP2213M-3.3E1  
AP2213M-3.3TRE1  
Tape & Reel  
Tube  
2213M-2.5E1  
2213M-3.0E1  
Tape & Reel  
Tube  
-40 to 125oC  
SOIC-8  
2213M-3.0E1  
2213M-3.3E1  
Tape & Reel  
Tube  
2213M-3.3E1  
Tape & Reel  
BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant.  
Mar. 2007 Rev. 1. 2  
BCD Semiconductor Manufacturing Limited  
4
Data Sheet  
500mA LOW NOISE LDO REGULATOR  
AP2213  
Absolute Maximum Ratings (Note 1)  
Parameter  
Symbol  
Value  
Unit  
Supply Input Voltage  
VIN  
20  
V
Enable Input Voltage  
VEN  
PD  
20  
V
Power Dissipation  
Internally Limited (Thermal Protection)  
W
oC  
oC  
Lead Temperature (Soldering, 10sec)  
Junction Temperature  
Storage Temperature  
TLEAD  
TJ  
260  
150  
oC  
V
TSTG  
ESD  
-65 to 150  
300  
ESD (Machine Model)  
TO-252-2 (1)  
SOIC-8  
90  
oC/W  
Thermal Resistance (No Heatsink)  
θJA  
160  
Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to  
the device. These are stress ratings only, and functional operation of the device at these or any other conditions  
beyond those indicated under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Max-  
imum Ratings" for extended periods may affect device reliability.  
Recommended Operating Conditions  
Parameter  
Symbol  
Min  
Max  
Unit  
Supply Input Voltage  
VIN  
2.5  
18  
V
Enable Input Voltage  
VEN  
TJ  
0
18  
V
oC  
Operating Junction Temperature  
-40  
125  
Mar. 2007 Rev. 1. 2  
BCD Semiconductor Manufacturing Limited  
5
Data Sheet  
500mA LOW NOISE LDO REGULATOR  
AP2213  
Electrical Characteristics  
AP2213-2.5 Electrical Characteristics  
VIN=3.5V, IOUT=100  
μ
A, CIN=1.0  
μ
F, COUT=2.2  
μ
F, VEN  
≥
2.0V, TJ=25oC, Bold typeface applies over  
-
40oC 125oC (Note 2),  
≤TJ≤  
unless otherwise specified.  
Parameter  
Symbol  
Conditions  
Min  
-1  
Typ  
Max  
Unit  
Variation from specified  
VOUT  
1
?VOUT/VOUT  
Output Voltage Accuracy  
%
-2  
2
μV/oC  
Output Voltage  
Temperature Coefficient  
(Note 3)  
120  
48  
?VOUT/?T  
ppm/oC  
(?VOUT/VOUT)/?T  
1.5  
4.5  
12  
VRLINE  
VIN=3.5V to 13.2V  
IOUT=0.1mA to 500mA  
IOUT=100μA  
Line Regulation  
mV  
mV  
Load Regulation  
(Note 4)  
1
7
VRLOAD  
17  
15  
50  
70  
110  
140  
165  
250  
350  
0.01  
100  
350  
1.3  
4
150  
230  
250  
300  
275  
350  
400  
500  
600  
700  
1
I
I
OUT=50mA  
OUT=100mA  
VDROP  
Dropout Voltage (Note 5)  
mV  
IOUT=150mA  
IOUT=300mA  
IOUT=500mA  
VEN≤0.4V (shutdown)  
VEN≤0.18V (shutdown)  
ISTD  
Standby Current  
μA  
μA  
5
150  
180  
600  
800  
1.9  
2.5  
10  
VEN≥2.0V, IOUT=100μA  
VEN≥2.0V, IOUT=50mA  
VEN≥2.0V, IOUT=150mA  
VEN≥2.0V, IOUT=300mA  
VEN≥2.0V, IOUT=500mA  
Ground Pin Current  
(Note 6)  
IGND  
mA  
15  
11  
20  
28  
Mar. 2007 Rev. 1. 2  
BCD Semiconductor Manufacturing Limited  
6
Data Sheet  
500mA LOW NOISE LDO REGULATOR  
AP2213  
Electrical Characteristics (Continued)  
AP2213-2.5 Electrical Characteristics  
VIN=3.5V, IOUT=100  
μ
A, CIN=1.0  
μ
F, COUT=2.2μF, VEN≥ - ≤TJ≤  
2.0V, TJ=25oC, Bold typeface applies over 40oC 125oC (Note 2),  
unless otherwise specified.  
Parameter  
Symbol  
PSRR  
Conditions  
Min  
Typ  
75  
Max  
Unit  
dB  
Ripple Rejection  
Current Limit  
f=100Hz, IOUT=100μA  
ILIMIT  
VOUT=0V  
700  
1000  
mA  
IOUT=50mA, COUT=2.2μF,  
100pF from BYP to GND  
eno  
Output Noise  
260  
nV / Hz  
0.4  
Enable Input Logic-low  
Voltage  
VIL  
Regulator shutdown  
V
0.18  
Enable Input Logic-high Voltage  
Enable Input Logic-low Current  
VIH  
IIL  
Regulator enabled  
VIL≤0.4V  
2.0  
V
0.01  
5
1
2
μA  
VIL≤0.18V  
VIL≥2.0V  
20  
25  
IIH  
Enable Input Logic-high Current  
μA  
VIL≥2.0V  
≤TJ≤  
Note 2: Specifications in bold type are limited to -40oC 125oC. Limits over temperature are guaranteed by design, but not  
tested in production.  
Note 3: Output voltage temperature coefficient is defined as the worst case voltage change divided by the total temperature  
range.  
Note 4: Regulation is measured at constant junction temperature using low duty cycle pulse testing. Parts are tested for load  
regulation in the load range from 0.1mA to 500mA. Changes in output voltage due to heating effects are covered by the thermal  
regulation specification.  
Note 5: Dropout voltage is defined as the input to output differential at which the output voltage drops 1% (TJ=25oC) or 2% (-  
≤TJ≤  
40oC 125oC) below its nominal value measured at 1V differential.  
Note 6: Ground pin current is the regulator quiescent current plus pass transistor base current. The total current drawn from the  
Mar. 2007 Rev. 1. 2  
BCD Semiconductor Manufacturing Limited  
7
Data Sheet  
500mA LOW NOISE LDO REGULATOR  
AP2213  
Electrical Characteristics (Continued)  
AP2213-3.0 Electrical Characteristics  
VIN=4V, IOUT=100  
μ
A, CIN=1.0  
μ
F, COUT=2.2  
μ
F, VEN  
≥
2.0V, TJ=25oC, Bold typeface applies over  
-
40oC  
≤TJ≤  
125oC (Note 2),  
unless otherwise specified.  
Parameter  
Symbol  
Conditions  
Min  
-1  
Typ  
Max  
Unit  
Variation from specified  
VOUT  
1
?VOUT/VOUT  
Output Voltage Accuracy  
%
-2  
2
μV/oC  
Output Voltage  
Temperature Coefficient  
(Note 3)  
120  
40  
?VOUT/?T  
ppm/oC  
(?VOUT/VOUT)/?T  
1.5  
4.5  
12  
VRLINE  
VIN=4V to 13.2V  
IOUT=0.1mA to 500mA  
IOUT=100μA  
Line Regulation  
mV  
mV  
Load Regulation  
(Note 4)  
1
8
VRLOAD  
17  
15  
50  
70  
110  
140  
165  
250  
350  
0.01  
100  
350  
1.3  
4
150  
230  
250  
300  
275  
350  
400  
500  
600  
700  
1
I
I
OUT=50mA  
OUT=100mA  
VDROP  
Dropout Voltage (Note 5)  
mV  
IOUT=150mA  
I
OUT=300mA  
IOUT=500mA  
VEN≤0.4V (shutdown)  
VEN≤0.18V (shutdown)  
ISTD  
Standby Current  
μA  
μA  
5
150  
180  
600  
800  
1.9  
2.5  
10  
VEN≥2.0V, IOUT=100μA  
VEN≥2.0V, IOUT=50mA  
VEN≥2.0V, IOUT=150mA  
VEN≥2.0V, IOUT=300mA  
VEN≥2.0V, IOUT=500mA  
Ground Pin Current  
(Note 6)  
IGND  
mA  
15  
20  
11  
28  
Mar. 2007 Rev. 1. 2  
BCD Semiconductor Manufacturing Limited  
8
Data Sheet  
500mA LOW NOISE LDO REGULATOR  
AP2213  
Electrical Characteristics (Continued)  
AP2213-3.0 Electrical Characteristics  
VIN=4V, IOUT=100  
μ
A, CIN=1.0  
μ
F, COUT=2.2  
μ
F, VEN  
≥
2.0V, TJ=25oC, Bold typeface applies over  
-
40oC  
≤TJ≤  
125oC (Note 2),  
unless otherwise specified.  
Parameter  
Symbol  
PSRR  
Conditions  
Min  
Typ  
75  
Max  
Unit  
dB  
Ripple Rejection  
Current Limit  
f=100Hz, IOUT=100μA  
ILIMIT  
VOUT=0V  
700  
1000  
mA  
IOUT=50mA, COUT=2.2μF,  
100pF from BYP to GND  
eno  
Output Noise  
260  
nV / Hz  
0.4  
Enable Input Logic-low  
Voltage  
VIL  
Regulator shutdown  
V
0.18  
Enable Input Logic-high Voltage  
Enable Input Logic-low Current  
VIH  
IIL  
Regulator enabled  
VIL≤0.4V  
2.0  
V
0.01  
5
1
2
μA  
VIL≤0.18V  
VIL≥2.0V  
20  
25  
IIH  
Enable Input Logic-high Current  
μA  
VIL≥2.0V  
≤TJ≤  
Note 2: Specifications in bold type are limited to -40oC 125oC. Limits over temperature are guaranteed by design, but not  
tested in production.  
Note 3: Output voltage temperature coefficient is defined as the worst case voltage change divided by the total temperature  
range.  
Note 4: Regulation is measured at constant junction temperature using low duty cycle pulse testing. Parts are tested for load  
regulation in the load range from 0.1mA to 500mA. Changes in output voltage due to heating effects are covered by the thermal  
regulation specification.  
Note 5: Dropout voltage is defined as the input to output differential at which the output voltage drops 1% (TJ=25oC) or 2% (-  
≤TJ≤  
40oC 125oC) below its nominal value measured at 1V differential.  
Note 6: Ground pin current is the regulator quiescent current plus pass transistor base current. The total current drawn from the  
supply is the sum of the load current plus the ground pin current.  
Mar. 2007 Rev. 1. 2  
BCD Semiconductor Manufacturing Limited  
9
Data Sheet  
500mA LOW NOISE LDO REGULATOR  
AP2213  
Electrical Characteristics (Continued)  
AP2213-3.3 Electrical Characteristics  
VIN=4.3V, IOUT=100  
μ
A, CIN=1.0  
μ
F, COUT=2.2  
μ
F, VEN  
≥
2.0V, TJ=25oC, Bold typeface applies over  
-
40oC 125oC (Note 2),  
≤TJ≤  
unless otherwise specified.  
Parameter  
Symbol  
Conditions  
Min  
-1  
Typ  
Max  
Unit  
Variation from specified  
VOUT  
1
?VOUT/VOUT  
Output Voltage Accuracy  
%
-2  
2
μV/oC  
Output Voltage  
Temperature Coefficient  
(Note 3)  
120  
?VOUT/?T  
ppm/oC  
(?VOUT/VOUT)/?T  
36.3  
1.5  
4.5  
12  
VRLINE  
VIN=4.3V to 13.2V  
IOUT=0.1mA to 500mA  
IOUT=100μA  
Line Regulation  
mV  
mV  
Load Regulation  
(Note 4)  
1
9
VRLOAD  
18  
15  
50  
70  
110  
140  
165  
250  
350  
0.01  
100  
350  
1.3  
4
150  
230  
250  
300  
275  
350  
400  
500  
600  
700  
1
I
I
I
I
I
OUT=50mA  
OUT=100mA  
OUT=150mA  
OUT=300mA  
OUT=500mA  
VDROP  
Dropout Voltage (Note 5)  
mV  
VEN≤0.4V (shutdown)  
VEN≤0.18V (shutdown)  
ISTD  
Standby Current  
μA  
μA  
5
150  
180  
600  
800  
1.9  
2.5  
10  
VEN≥2.0V, IOUT=100μA  
VEN≥2.0V, IOUT=50mA  
VEN≥2.0V, IOUT=150mA  
VEN≥2.0V, IOUT=300mA  
VEN≥2.0V, IOUT=500mA  
Ground Pin Current  
(Note 6)  
IGND  
mA  
15  
20  
11  
28  
Mar. 2007 Rev. 1. 2  
BCD Semiconductor Manufacturing Limited  
10  
Data Sheet  
500mA LOW NOISE LDO REGULATOR  
AP2213  
Electrical Characteristics (Continued)  
AP2213-3.3 Electrical Characteristics  
VIN=4.3V, IOUT=100  
μ
A, CIN=1.0  
μ
F, COUT=2.2μF, VEN≥ - ≤TJ≤  
2.0V, TJ=25oC, Bold typeface applies over 40oC 125oC (Note 2),  
unless otherwise specified.  
Parameter  
Symbol  
PSRR  
Conditions  
Min  
Typ  
75  
Max  
Unit  
dB  
Ripple Rejection  
Current Limit  
f=100Hz, IOUT=100μA  
ILIMIT  
VOUT=0V  
700  
1000  
mA  
IOUT=50mA, COUT=2.2μF,  
100pF from BYP to GND  
eno  
Output Noise  
260  
nV / Hz  
0.4  
Enable Input Logic-low  
Voltage  
VIL  
Regulator shutdown  
V
0.18  
Enable Input Logic-high Voltage  
Enable Input Logic-low Current  
VIH  
IIL  
Regulator enabled  
VIL≤0.4V  
2.0  
V
0.01  
5
1
2
μA  
VIL≤0.18V  
VIL≥2.0V  
20  
25  
IIH  
Enable Input Logic-high Current  
μA  
VIL≥2.0V  
≤TJ≤  
Note 2: Specifications in bold type are limited to -40oC 125oC. Limits over temperature are guaranteed by design, but not  
tested in production.  
Note 3: Output voltage temperature coefficient is defined as the worst case voltage change divided by the total temperature  
range.  
Note 4: Regulation is measured at constant junction temperature using low duty cycle pulse testing. Parts are tested for load  
regulation in the load range from 0.1mA to 500mA. Changes in output voltage due to heating effects are covered by the thermal  
regulation specification.  
Note 5: Dropout voltage is defined as the input to output differential at which the output voltage drops 1% (TJ=25oC) or 2% (-  
≤TJ≤  
40oC 125oC) below its nominal value measured at 1V differential.  
Note 6: Ground pin current is the regulator quiescent current plus pass transistor base current. The total current drawn from the  
supply is the sum of the load current plus the ground pin current.  
Mar. 2007 Rev. 1. 2  
BCD Semiconductor Manufacturing Limited  
11  
Data Sheet  
500mA LOW NOISE LDO REGULATOR  
AP2213  
Typical Performance Characteristics  
850  
800  
750  
700  
650  
600  
550  
500  
450  
400  
350  
300  
250  
200  
150  
100  
50  
2.502  
CIN=1μF, COUT=2.2μF  
IOUT=50mA  
IOUT=100mA  
IOUT=150mA  
IOUT=300mA  
IOUT=500mA  
AP2213-2.5  
VIN=3.5V, IOUT=10mA  
2.500  
2.498  
2.496  
2.494  
2.492  
2.490  
2.488  
2.486  
2.484  
CIN=1μF, COUT=2.2μF  
-60  
-40  
-20  
0
20  
40  
60  
80  
100  
120  
140  
-60  
-40  
-20  
0
20  
40  
60  
80  
100  
120  
140  
Junction Temperature (oC)  
Junction Temperature (oC)  
Figure 4. Output Voltage vs. Junction Temperature  
Figure 5. Dropout Voltage vs. Junction Temperature  
20  
10  
AP2213-2.5  
IOUT=50mA  
IOUT=100mA  
IOUT=150mA  
IOUT=300mA  
IOUT=500mA  
18  
16  
14  
12  
10  
8
9
TA=25oC  
VIN=3.5V, CIN=1μF, COUT=2.2μF  
8
CIN=1μF, COUT=2.2μF  
7
6
5
4
3
2
1
0
6
4
2
0
-60  
-40  
-20  
0
20  
40  
60  
80  
100  
120  
140  
0
100  
200  
300  
400  
500  
Junction Temperature (0C)  
Output Current (mA)  
Figure 6. Ground Pin Current vs. Output Current  
Figure 7. Ground Pin Current vs. Junction Temperature  
Mar. 2007 Rev. 1. 2  
BCD Semiconductor Manufacturing Limited  
12  
Data Sheet  
500mA LOW NOISE LDO REGULATOR  
AP2213  
Typical Performance Characteristics (Continued)  
1.8  
13  
AP2213-2.5, VIN=3.5V  
1.7  
12  
AP2213-2.5  
CIN=1μF, COUT=2.2μF  
CIN=1μF, COUT=2.2μF, IOUT=100μA  
1.6  
11  
VEN=1.8V  
VEN=2V  
1.5  
1.4  
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
0.6  
0.5  
IOUT=100μA, VIN=3.5V  
10  
9
VEN=3V  
VEN=3.7V  
8
7
VEN=logic high  
VEN=logic low  
6
5
4
3
2
-60  
-60  
-40  
-20  
0
20  
40  
60  
80  
100  
120  
140  
-40  
-20  
0
20  
40  
60  
80  
100  
120  
140  
Junction Temperature (oC)  
Junction Temperature (oC)  
Figure 9. Enable Voltage vs. Junction Temperature  
Figure 8. Enable Current vs. Junction Temperature  
100  
200  
AP2213-2.5  
IOUT=10mA  
IOUT=10mA, CIN=1μF, COUT=2.2μF  
10  
1
CIN=1μF, COUT=2.2μF  
VIN=3.5V, CBYP=100pF  
Noise Measurement Filter: DIN Noise  
150  
100  
50  
0.1  
0.01  
0.001  
0.0001  
0
10  
10  
100  
1k  
10k  
100k  
1M  
10M  
100  
1000  
10000  
Bypass Capacitor (pF)  
Frequency (Hz)  
Figure 10. Noise vs. Bypass Capacitor  
Figure 11. Output Noise vs. Frequency  
Mar. 2007 Rev. 1. 2  
BCD Semiconductor Manufacturing Limited  
13  
Data Sheet  
500mA LOW NOISE LDO REGULATOR  
AP2213  
Typical Performance Characteristics (Continued)  
5.5  
4.5  
3.5  
2.5  
1
AP2213-2.5  
AP2213-2.5  
0.5  
0
10mA  
-0.5  
10  
0
-10  
-20  
-30  
0
-10  
-20  
Time (200μs/Div)  
Time (200μs/Div)  
Figure 13. Line Transient  
Figure 12. Load Transient  
(Conditions: V =3.5V, C  
(Conditions: VIN=3.4 to 4.4V, VEN=2V, IOUT=100μA,  
CBYP=100pF, COUT=2.2μF)  
=100pF, V =2V,  
IN  
BYP  
EN  
I
=10 to 500mA, C =1  
μF, C  
=2.2μF)  
OUT  
IN  
OUT  
3
100  
AP2213-2.5  
AP2213-2.5  
VIN=3.5V, VRIPPLE=1VPP  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
2
1
0
IOUT=10mA, COUT=2.2μF  
2
1
0
10  
100  
1k  
10k  
100k  
1M  
-1  
Frequency (Hz)  
Time (40μs/Div)  
Figure 14. V vs. V  
Figure 15. PSRR vs. Frequency  
EN  
OUT  
(Conditions: V =0 to 2V, V =3.5V, I =30mA,  
OUT  
EN  
IN  
C
=open, C =1μF, C  
=2.2μF)  
BYP  
IN  
OUT  
Mar. 2007 Rev. 1. 2  
BCD Semiconductor Manufacturing Limited  
14  
Data Sheet  
500mA LOW NOISE LDO REGULATOR  
AP2213  
Typical Performance Characteristics (Continued)  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
SOIC-8 Package  
No Heatsink  
TO-252-2(1) Package  
No Heatsink  
25  
50  
75  
100  
125  
150  
25  
50  
75  
100  
125  
150  
Ambient Temperature (oC)  
Ambient Temperature (oC)  
Figure 16. Power Dissipation vs. Ambient Temperature  
Figure 17. Power Dissipation vs. Ambient Temperature  
1000  
1000  
COUT=2.2μF  
COUT=1μF  
No Bypass Capacitor  
100  
No Bypass Capacitor  
100  
10  
10  
Stable Area  
1
Stable Area  
1
0.1  
0.1  
0.01  
0.01  
0
50  
100  
150  
200  
250  
300  
350  
400  
450  
500  
0
50  
100  
150  
200  
250  
300  
350  
400  
450  
500  
Output Current (mA)  
Output Current (mA)  
Figure 18. ESR vs. Output Current  
Figure 19. ESR vs. Output Current  
Mar. 2007 Rev. 1. 2  
BCD Semiconductor Manufacturing Limited  
15  
Data Sheet  
500mA LOW NOISE LDO REGULATOR  
AP2213  
Typical Performance Characteristics (Continued)  
1000  
COUT=4.7μF  
No Bypass Capacitor  
100  
10  
Stable Area  
1
0.1  
0.01  
0
50  
100  
150  
200  
250  
300  
350  
400  
450  
500  
Output Current (mA)  
Figure 20. ESR vs. Output Current  
Mar. 2007 Rev. 1. 2  
BCD Semiconductor Manufacturing Limited  
16  
Data Sheet  
500mA LOW NOISE LDO REGULATOR  
AP2213  
Typical Application  
VIN=3.5V  
AP2213-2.5  
VOUT=2.5V  
VIN  
VIN  
VOUT  
BYP  
VOUT  
EN  
COUT  
2.2μF  
CIN  
1μF  
GND  
CBYP  
100pF  
Figure 21. Typical Application of AP2213 (Note 7)  
Note 7: Dropout voltage is 350mV when TA=25oC. In order to obtain a normal output voltage, VOUT+0.35V is the minimum  
input voltage which will results a low PSRR, imposing a bad influence on system. Therefore, the recommended input voltage  
is VOUT+1V to 18V. For AP2213-2.5 version, its input voltage can be set from 3.5V(VOUT+1V) to 18V.  
Mar. 2007 Rev. 1. 2  
BCD Semiconductor Manufacturing Limited  
17  
Data Sheet  
500mA LOW NOISE LDO REGULATOR  
AP2213  
Application Information  
Input Capacitor  
A 1μF minimum capacitor is recommended to be  
placed between V and GND.  
To determine if the power dissipated in the regulator  
reaches the maximum power dissipation (see figure  
16, 17), using:  
IN  
T = P *θ + T  
J
D
JA  
A
Output Capacitor  
P =(V -V  
)*I  
+V *I  
D
IN OUT OUT IN GND  
It is required to prevent oscillation. 1μF minimum is  
recommended when C  
is unused. 2.2μF mini-  
Where: T ≤T  
, T  
is absolute maximum rat-  
BYP  
J
J(max) J(max)  
mum is recommended when C  
is 100pF. The out-  
ings for the junction temperature; V *I  
can be  
BYP  
IN GND  
put capacitor may be increased to improve transient  
response.  
ignored due to its small value.  
o
o
T
is 150 C, θ is 90 C/W for TO-252-2 (1)  
J(max)  
JA  
Noise Bypass Capacitor  
o
package and 160 C/W for SOIC-8 package.  
Bypass capacitor is connected to the internal voltage  
reference. A 100pF capacitor connected from BYP to  
GND make this reference quiet, resulting in a  
significant reduction in output noise, but the ESR  
stable area will be narrowed.  
Example: For 2.5V version packaged in SOIC-8,  
o
I
=500mA, T =50 C, V  
is:  
IN(Max)  
OUT  
A
o
o
o
(150 C-50 C)/(0.5A*160 C/W)+2.5V=3.75V  
The start-up speed of the AP2213 is inversely  
proportional to the value of reference bypass  
capacitor. In some cases, if output noise is not a  
major concern and rapid turn-on is necessary, omit  
Therefore, for good performance, please make sure  
that input voltage is less than 3.75V without heatsink  
o
when T =50 C.  
A
C
and leave BYP open.  
BYP  
Power Dissipation  
Thermal shutdown may take place if exceeding the  
maximum power dissipation in application. Under all  
possible operating conditions, the junction tempera-  
ture must be within the range specified under abso-  
lute maximum ratings to avoid thermal shutdown.  
Mar. 2007 Rev. 1. 2  
BCD Semiconductor Manufacturing Limited  
18  
Data Sheet  
500mA LOW NOISE LDO REGULATOR  
AP2213  
Mechanical Dimensions  
TO-252-2(1)  
Unit: mm(inch)  
6.350(0.250)  
6.650(0.262)  
2.200(0.087)  
2.400(0.094)  
4.300(0.169)  
5.400(0.212)  
5.200(0.205)  
5.400(0.213)  
0.430(0.017)  
0.580(0.023)  
8°  
0.000(0.000)  
0.127(0.005)  
5°  
5°  
0.700(0.028)  
0.900(0.035)  
0.500(0.020)  
0.700(0.028)  
3°  
4°  
2.300TYP  
0.430(0.017)  
0.580(0.023)  
4.500(0.177)  
4.700(0.165)  
Mar. 2007 Rev. 1. 2  
BCD Semiconductor Manufacturing Limited  
19  
Data Sheet  
500mA LOW NOISE LDO REGULATOR  
AP2213  
Mechanical Dimensions (Continued)  
SOIC-8  
Unit: mm(inch)  
4.700(0.185)  
0.320(0.013)  
1.350(0.053)  
1.750(0.069)  
5.100(0.201)  
0.675(0.027)  
0.725(0.029)  
D
5.800(0.228)  
6.200(0.244)  
1.270(0.050)  
TYP  
D
20:1  
φ
0.800(0.031)  
0.200(0.008)  
0.100(0.004)  
0.300(0.012)  
0°  
8°  
1.000(0.039)  
3.800(0.150)  
4.000(0.157)  
0.190(0.007)  
0.250(0.010)  
1°  
5°  
0.330(0.013)  
0.510(0.020)  
0.900(0.035)  
6)  
00  
(0.  
50  
.1  
R0  
0.450(0.017)  
0.800(0.031)  
Mar. 2007 Rev. 1. 2  
BCD Semiconductor Manufacturing Limited  
20  
http://www.bcdsemi.com  
IMPORTANT NOTICE  
BCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifi-  
cations herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility for use of any its products for any  
particular purpose, nor does BCD Semiconductor Manufacturing Limited assume any liability arising out of the application or use  
of any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights or  
other rights nor the rights of others.  
MAIN SITE  
BCD Semiconductor Manufacturing Limited  
BCD Semiconductor Manufacturing Limited  
- Wafer Fab  
- IC Design Group  
Shanghai SIM-BCD Semiconductor Manufacturing Limited  
800, Yi Shan Road, Shanghai 200233, China  
Tel: +86-21-6485 1491, Fax: +86-21-5450 0008  
Advanced Analog Circuits (Shanghai) Corporation  
8F, Zone B, 900, Yi Shan Road, Shanghai 200233, China  
Tel: +86-21-6495 9539, Fax: +86-21-6485 9673  
REGIONAL SALES OFFICE  
Shenzhen Office  
Taiwan Office  
BCD Semiconductor (Taiwan) Company Limited  
4F, 298-1, Rui Guang Road, Nei-Hu District, Taipei, 30920 Huntwood Ave. Hayward,  
USA Office  
BCD Semiconductor Corporation  
Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd. Shenzhen Office  
Advanced Analog Circuits (Shanghai) Corporation Shenzhen Office  
Room E, 5F, Noble Center, No.1006, 3rd Fuzhong Road, Futian District, Shenzhen 518026, China Taiwan  
CA 94544, U.S.A  
Tel: +86-755-8826 7951  
Fax: +86-755-8826 7865  
Tel: +886-2-2656 2808  
Fax: +886-2-2656 2806  
Tel : +1-510-324-2988  
Fax: +1-510-324-2788  
配單直通車
AP2213D-3.3TRE1產(chǎn)品參數(shù)
型號:AP2213D-3.3TRE1
生命周期：Transferred
IHS 制造商：BCD SEMICONDUCTOR MANUFACTURING LTD
零件包裝代碼：TO-252
包裝說明：TO-252,
針數(shù)：4
Reach Compliance Code：unknown
ECCN代碼：EAR99
HTS代碼：8542.39.00.01
風(fēng)險等級：5.35
Is Samacsys：N
最大回動電壓 1：0.7 V
最大輸入電壓：18 V
最小輸入電壓：2.5 V
JESD-30 代碼：R-PSSO-G2
長度：6.5 mm
功能數(shù)量：1
端子數(shù)量：2
工作溫度TJ-Max：125 °C
工作溫度TJ-Min：-40 °C
最大輸出電流 1：0.5 A
最大輸出電壓 1：3.366 V
最小輸出電壓 1：3.234 V
標稱輸出電壓 1：3.3 V
封裝主體材料：PLASTIC/EPOXY
封裝代碼：TO-252
封裝形狀：RECTANGULAR
封裝形式：SMALL OUTLINE
調(diào)節(jié)器類型：FIXED POSITIVE SINGLE OUTPUT LDO REGULATOR
座面最大高度：2.527 mm
表面貼裝：YES
端子形式：GULL WING
端子節(jié)距：2.3 mm
端子位置：SINGLE
寬度：5.55 mm
Base Number Matches：1
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